DocumentCode :
2683548
Title :
Light emission in (La, Al)2O3/Si MOS tunnel diodes
Author :
Lin, Colin Yu ; Lee, H.Y. ; Chin, Alvin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
2
fYear :
2003
fDate :
15-19 Dec. 2003
Abstract :
Efficient light emission from (La, Al)2/Si MOS tunnel diodes with photon energies ranging from 1.4 to 1.6 eV was demonstrated. This novel technology should find wide applications in optical interconnects and wireless communications.
Keywords :
MIS devices; aluminium compounds; elemental semiconductors; lanthanum compounds; light emitting diodes; silicon; tunnel diodes; (La, Al)2O3/Si MOS tunnel diodes; 1.4 to 1.6 eV; Al2O3-Si; La2O3-Si; Si-based light emitting devices; light emission; optical interconnects; photon energy; wireless communications; Dielectric materials; Dielectric measurements; Diodes; High K dielectric materials; High-K gate dielectrics; Optical interconnections; Optical materials; Quantization; Surface fitting; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
Type :
conf
DOI :
10.1109/CLEOPR.2003.1277163
Filename :
1277163
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2683548
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