DocumentCode :
2683564
Title :
Die backside stress modification by coating of Si3N4 or AlN layers
Author :
Liao, J. ; Liu, S.H. ; Yu, Y.T. ; Lin, Y. ; Jin, G. ; Huang, G. ; Fu, Z.Z.
Author_Institution :
State Key Lab. of Electron. Thin films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2011
fDate :
25-28 Oct. 2011
Firstpage :
373
Lastpage :
377
Abstract :
The ability to improve the mechanical properties of a microelectronic package, including reducing the thermal-mechanical stress and increasing the die breaking strength is a long-sought goal in electrical assembly and packaging technology. Failure modes related with die backside stress caused by warpage or cosmetic defects may occur without a well control of die-backside stress. In this study, the modifications of die backside stress by coating of a thin layer of AlN or Si3N4 have been investigated. The simulation through the Finite Element Method (FEM) indicated that the stress distribution can be modified after coating and it is strongly related to the thickness of the coated layer, as the stress of die backside surface reduces. Die breaking strength has been measured by 3 point bending test and the measurement results are compared between samples with and without coatings. It is demonstrated that the die breaking strength is related with the thickness and the surface roughness of the coating layer of AlN or Si3N4. Improvement in the die breaking strength can be realized when the thickness and surface roughness are both optimized. The results suggested the additional coating of the die backside may be a feasible way to improve the mechanical properties of the electronic packages.
Keywords :
III-V semiconductors; aluminium compounds; coatings; compressive strength; failure (mechanical); finite element analysis; integrated circuit packaging; integrated circuit reliability; mechanical properties; semiconductor device packaging; semiconductor thin films; silicon compounds; stress analysis; surface roughness; wide band gap semiconductors; AlN; AlN layer coating; Si; Si3N4; Si3N4 layer coating; cosmetic defect; die backside stress modification; die backside surface; die breaking strength; electrical assembly; failure mode; finite element method; mechanical property; microelectronic package; packaging technology; surface roughness; surface thickness; thermal-mechanical stress; Coatings; Rough surfaces; Satellite broadcasting; Silicon; Stress; Surface roughness; Surface treatment; 3PB; FEA; coating layer; flip-chip; stress modification;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Packaging Materials (APM), 2011 International Symposium on
Conference_Location :
Xiamen
ISSN :
1550-5723
Print_ISBN :
978-1-4673-0148-0
Type :
conf
DOI :
10.1109/ISAPM.2011.6105734
Filename :
6105734
Link To Document :
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