DocumentCode
2683569
Title
Dependencies of optical and material properties on nominal indium content and well width in InGaN/GaN quantum well structures
Author
Tsung-Yi Tang ; Chih-Chung Teng ; Shih-Chun Lin ; En-Chiang Lin ; Meng-Ku Chen ; Cheng-Ming Wu ; Jiun-Yang Chen ; Yung-Chen Cheng ; Shih-Wei Feng ; Yang, C.C.
Author_Institution
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
2
fYear
2003
fDate
15-19 Dec. 2003
Abstract
Optical properties and material microstructures of InGaN/GaN quantum wells structures with various nominal indium contents, quantum well widths, and different thermal annealing conditions were compared to show the effects of indium aggregations and strains.
Keywords
III-V semiconductors; aggregation; annealing; crystal microstructure; gallium compounds; indium compounds; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; InGaN/GaN quantum well; InGaN/GaN quantum wells structures; indium aggregations; material microstructures; material properties; nominal indium content; optical properties; strains; thermal annealing conditions; well width; Annealing; Capacitive sensors; Epitaxial growth; Gallium nitride; Indium; Material properties; Mechanical engineering; Microstructure; Optical buffering; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1277164
Filename
1277164
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