DocumentCode
2683610
Title
TWTA Linearize Using Dual-Gate MESFET
Author
Kumar, M. ; Whartenby, J.C.
fYear
1984
fDate
May 30 1984-June 1 1984
Firstpage
314
Lastpage
315
Abstract
This paper presents a new predistortion technique using GaAs dual-gate MESFETs to linearize the microwave power amplifiers. The results of a linearized 16-watt traveling wave tube amplifier at 12 GHz are presented. The linearize affects a 12 dB reduction in this third-order intermodulation products at 2.5 dB input power back off.
Keywords
Attenuators; Circuits; FETs; High power amplifiers; MESFETs; Microwave amplifiers; Phase distortion; Power amplifiers; Power generation; Predistortion;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1984.1131776
Filename
1131776
Link To Document