DocumentCode
2683742
Title
CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition
Author
Tatebayashi, J. ; Kakuma, H. ; Hatori, N. ; Ishida, M. ; Ebe, H. ; Sudo, H. ; Kuramata, A. ; Nakata, Y. ; Sugawara, M. ; Arakawa, Y.
Volume
2
fYear
2003
fDate
15-19 Dec. 2003
Abstract
We report the fabrication and laser characteristics of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapor deposition. Continuous-wave lasing at room temperature with low threshold current (6.7 mA) has been achieved at the lasing wavelength of 1.18 μm.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; optical fabrication; quantum dot lasers; self-assembly; semiconductor quantum dots; 1.18 mum; 25 degC; 6.7 mA; GaAs; GaAs substrates; InAs-GaAs; continuous-wave lasing; cw lasing; laser characteristics; low threshold current; metalorganic chemical vapour deposition; room temperature; self-assembled InAs quantum dot lasers; semiconductor lasers; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Laser theory; MOCVD; Molecular beam epitaxial growth; Quantum dot lasers; Semiconductor lasers; Substrates; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1277174
Filename
1277174
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