Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition

Author

Chang, Wen-Hao ; Wen-Yen Cheng ; Chou, An-Tai ; Hsu, Tzu-Min ; Chen, Pan-Shiu ; Pei, Zingway ; Lai, Li-Shyue

Author_Institution

Dept. of Phys., Nat. Central Univ., Chung-li, Taiwan

Volume

2

fYear

2003

fDate

15-19 Dec. 2003

Abstract

Photoluminescence investigations on stacked Ge/Si quantum dots with different thicknesses of Si spacer layer are presented. According to the emission energy shift in the Ge dots, we found that thinner spacer will lead to remarkable Ge-Si intermixing. Such intermixing can be attributed to the strain-induced material intermixing, which tends to shallow the dot potential, soften the dot/spacer interface sharpness, and hence degrade their room-temperature emission properties.

Keywords

chemical vapour deposition; elemental semiconductors; germanium; mixing; photoluminescence; semiconductor quantum dots; silicon; 25 degC; Ge dots; Ge-Si; Ge-Si intermixing; Si spacer; chemical vapor deposition; dot/spacer interface sharpness; emission energy shift; multiple-stacked Ge/Si quantum dots; photoluminescence investigations; room-temperature emission properties; strain-induced material intermixing; Capacitive sensors; Chemical vapor deposition; Degradation; Displays; Photoluminescence; Physics; Quantum dots; Temperature measurement; US Department of Transportation; Vacuum systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1277176

Filename

1277176