DocumentCode :
2683838
Title :
Design optimization in SOI-based high sensitivity piezoresistive cantilever devices
Author :
Kebbati, Y. ; Boujrharhe, M.
Author_Institution :
Lab. de Phys. et Chimie de l´´Environnement et de l´´Espace, Orléans, France
fYear :
2010
fDate :
23-25 March 2010
Firstpage :
1
Lastpage :
5
Abstract :
In this work, the authors present the new design of MEMS high-sensitivity piezoresistive cantilever. The prospect is to develop the tactile sensor for space mission. The finite element method with parametric design, carried out using CoventorWare2008, was applied to obtain the most advantageous performance by optimizing shape and geometrical dimension of both cantilever and piezoresistor. The sensor performance was measured on the basis of output voltage and surface stress sensitivity. Frequency and temperature studies were investigated. An analysis was also conducted on the effects of incorporating various stress concentration region designs at the cantilever. Results show that cantilever with “appropriate” shape and structural holes yields maximum stress which results in maximum sensitivity. A comparison between different devices in terms of dimension and shape: cantilever, piezoresistor, holes are presented.
Keywords :
finite element analysis; micromechanical devices; optimisation; piezoresistive devices; resistors; silicon-on-insulator; tactile sensors; MEMS; SOI; design optimization; finite element method; piezoresistive cantilever devices; piezoresistor; space mission; tactile sensor; Design methodology; Design optimization; Finite element methods; Micromechanical devices; Piezoresistance; Shape; Space missions; Stress measurement; Tactile sensors; Voltage; MEMS; cantilever; finite element analysis; parametric design; piezoresistor; stress concentration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design and Technology of Integrated Systems in Nanoscale Era (DTIS), 2010 5th International Conference on
Conference_Location :
Hammamet
Print_ISBN :
978-1-4244-6338-1
Type :
conf
DOI :
10.1109/DTIS.2010.5487599
Filename :
5487599
Link To Document :
بازگشت