Title :
High Power Broadband, 35 GHz Waveguide Switch Using A Monolithic Diode Array
Author :
Armstrong, A.L. ; Wheeler, D.E. ; Goodrich, J.
fDate :
May 30 1984-June 1 1984
Abstract :
A monolithic array of silicon diodes has been utilized to fabricate a 35 GHz single throw waveguide switch with over 400 W peak and 20 W average power capability. The switch provides 23 dB isolation, 60 nanosecond switching speed, under 1 dB insertion loss and 1.6:1 VSWR over the 26.5 to 40 GHz waveguide bandwidth. A double throw version handles 40 W average power and has a 25% bandwidth.
Keywords :
Bandwidth; Electric resistance; Power semiconductor switches; Radio frequency; Semiconductor diodes; Semiconductor waveguides; Silicon; Stacking; Temperature; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/MWSYM.1984.1131806
