DocumentCode
2684158
Title
Substrate curvature measurement system
Author
Groenewald, B. ; Tapson, J. ; Mann, A.B. ; Weihs, T.P.
Author_Institution
Dept. of Electr. Eng., Cape Town Univ., Rondebosch, South Africa
fYear
2000
fDate
2000
Firstpage
458
Lastpage
463
Abstract
Mechanical stress on wafer substrates is a problem of growing importance in the microelectronics industry due to the demand for reduced device dimensions. This ultimately leads to stress in interconnections during the manufacture of very large scale integrated devices (VLSI). Differences in thermal expansions between film and substrate lead to stresses introduced by temperature changes after film deposition, which results in spherical deformation of the substrate. Several one-dimensional measurement techniques are available to measure the spherical deformation of substrates, with the most recent technique being a combination of a laser beam deflection and light scattering techniques. In this paper we describe a novel technique for substrate curvature measurement. It makes use of a 2-dimensional low power optical scanning technique with few moving components, and has an error voltage correction scheme for the reduction of position inaccuracy. This system has been built and tested and the results are discussed
Keywords
VLSI; curvature measurement; integrated circuit interconnections; substrates; thermal expansion; 2D low power optical scanning technique; VLSI; error voltage correction; interconnections; mechanical stress; one-dimensional measurement; spherical deformation; substrate curvature measurement; thermal expansion; wafer substrates;
fLanguage
English
Publisher
iet
Conference_Titel
Dielectric Materials, Measurements and Applications, 2000. Eighth International Conference on (IEE Conf. Publ. No. 473)
Conference_Location
Edinburgh
Print_ISBN
0-85296-730-6
Type
conf
DOI
10.1049/cp:20000552
Filename
888161
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