Title :
Self-Consistent FET Models for Amplifier Design and Device Diagnostics
Author :
Curtice, W.R. ; Camisa, R.L.
fDate :
May 30 1984-June 1 1984
Abstract :
A procedure has been developed for producing accurate and unique equivalent circuit models for carrier mounted GaAs FETs. The procedure incorporates zero drain-source bias S-parameter tests as well as Fukui-type, dc measurements. Data for 1 µm gate length, 600 µm periphery GaAs FETs are presented.
Keywords :
Capacitors; Electrical resistance measurement; Equivalent circuits; Gallium arsenide; Inductance; Microwave FETs; Microwave devices; Microwave technology; Scattering parameters; Semiconductor device measurement;
Conference_Titel :
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/MWSYM.1984.1131817
