DocumentCode
2684294
Title
A 6 Watt 6 GHz GaAsFET Power Module with GaAs Matching Circuits
Author
Magalhaes, F.M. ; Beccone, J.P. ; Irvin, J.C. ; Perelli, S.J. ; Schlosser, W.O.
fYear
1984
fDate
May 30 1984-June 1 1984
Firstpage
437
Lastpage
438
Abstract
A GaAs matched FET (M-FET) technology has been developed which incorporates separate GaAs matching chips and GaAsFETs within a small hermetic package. By using two separately matched 6 mm FET chips in the design, we have achieved 6.3 watts of output power with 9 dB associated gain at 6 GHz.
Keywords
Bandwidth; Capacitors; Circuit optimization; FETs; Gallium arsenide; Impedance; Monolithic integrated circuits; Multichip modules; Packaging; Power transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1984.1131821
Filename
1131821
Link To Document