Title :
Q and V band doublers and receivers
Author :
Convert, Emmanuelle R O ; Mahon, Simon J. ; Fattorini, Anthony P. ; Dadello, Anna ; Tarazi, Jabra ; McCulloch, MacCrae G. ; Hwang, Steve ; Harvey, James T.
Author_Institution :
Sydney Design Centre, Macom Technol. Solutions, Sydney, NSW, Australia
Abstract :
A Q band doubler and a self-biased V band doubler are presented. The Q band doubler has an output power of 18 dBm and a PAE of 14% which is the highest PAE reported to date at this frequency to the authors´ knowledge. The V band doubler produces 16 dBm near its band centre. The doublers are key subcircuits for a Q band receiver with 11 dB gain, IIP3 of 5 dBm and noise figure of approximately 3 dB, and a self-biased V band receiver with 16 dB gain and an IIP3 of -14 dBm.
Keywords :
MMIC; frequency multipliers; high electron mobility transistors; millimetre wave receivers; PAE; Q band doubler; Q band receiver; V band receiver; band centre; noise figure; selfbiased V band doubler; Gain; Logic gates; MMICs; Power amplifiers; Power generation; Radio frequency; Receivers; HEMTs; MMICs; frequency doubler; receivers;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4577-1692-8
DOI :
10.1109/COMCAS.2011.6105775
