Title :
Comprehensive gate-oxide reliability evaluation for dram processes
Author :
Vollertsen, R.-P. ; Abadeer, W.W.
Author_Institution :
ISMMENS Comp., Inc.
Keywords :
Acceleration; Breakdown voltage; Costs; Degradation; Failure analysis; Microelectronics; Random access memory; Rivers; Stress; Testing;
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
DOI :
10.1109/ESREF.1996.888179
