Title :
AlGaAs PIN diode multi-octave, mmW switches
Author :
Boles, T. ; Brogle, J. ; Hoag, D. ; Curcio, D.
Author_Institution :
M/A-COM Technol. Solutions, Lowell, MA, USA
Abstract :
The novel use of an AlGaAs/GaAs heterojunction to form a PIN diode, with reduced RF resistance (RS) and no change in junction capacitance (CT)[1]-[3], has been analyzed and employed in the development of several different PIN diode switches of various circuit topologies. Series designs demonstrate improved insertion loss, shunt designs improved isolation, and series-shunt designs improvements in both parameters. These switches demonstrate superior broadband performance, with low insertion loss and high isolation from 50MHz to almost 80GHz, and series-shunt switches exhibit 50% increased input power capability over equivalent homojunction GaAs PIN diode switches.
Keywords :
III-V semiconductors; aluminium compounds; electric resistance; gallium arsenide; millimetre wave devices; millimetre wave diodes; network topology; p-i-n diodes; semiconductor heterojunctions; semiconductor switches; AlGaAs-GaAs; PIN diode multioctave millimetre wave switch; RF resistance reduction; circuit topology; homojunction PIN diode switch; insertion loss; junction capacitance; semiconductor heterojunction; series-shunt design; series-shunt switch; Broadband communication; Gallium arsenide; Heterojunctions; Insertion loss; P-i-n diodes; PIN photodiodes; Resistance; Heterojunction Devices; Monolithic Switches; PIN Diode Switches; mmW Switches;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4577-1692-8
DOI :
10.1109/COMCAS.2011.6105783
