DocumentCode :
2684529
Title :
Electric field dependence of TDDB activation energy in ultrathin oxides
Author :
Vincent, E. ; Evil, N. ; Papadas, C. ; Ghibaudo, G.
Author_Institution :
SGS-THOMSON Microelectronics
fYear :
1996
fDate :
1996
Firstpage :
1643
Lastpage :
1646
Keywords :
Acceleration; Attenuation; Capacitors; Electric breakdown; Extrapolation; Life estimation; Lifetime estimation; Microelectronics; Stress; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
Type :
conf
DOI :
10.1109/ESREF.1996.888181
Filename :
888181
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2684529
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