Title :
A new physics-based model for time dependent dielectric breakdown
Author :
Schlund, B.J. ; Suehle, J. ; Messick, C. ; Chaparala, P.
Author_Institution :
National Semiconductor Corp.
Keywords :
Dielectric breakdown; Electrons; Impact ionization; Mathematical model; NIST; Physics; Semiconductor device testing; Temperature dependence; Temperature distribution; Thermal stresses;
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
DOI :
10.1109/ESREF.1996.888184
