DocumentCode
2684578
Title
A new physics-based model for time dependent dielectric breakdown
Author
Schlund, B.J. ; Suehle, J. ; Messick, C. ; Chaparala, P.
Author_Institution
National Semiconductor Corp.
fYear
1996
fDate
1996
Firstpage
1655
Lastpage
1658
Keywords
Dielectric breakdown; Electrons; Impact ionization; Mathematical model; NIST; Physics; Semiconductor device testing; Temperature dependence; Temperature distribution; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN
0-7803-3369-1
Type
conf
DOI
10.1109/ESREF.1996.888184
Filename
888184
Link To Document