DocumentCode
2684640
Title
Relationship between profile of stress generated interface traps and degradation of submicron LDD MOSFET´S
Author
Okhonin, S. ; Hessler, T. ; Dutoit, M.
Author_Institution
Swiss Federal Institute of Technology
fYear
1996
fDate
1996
Firstpage
1671
Lastpage
1674
Keywords
CMOS technology; Degradation; Electric resistance; Interface states; Life estimation; Lifetime estimation; MOSFET circuits; Parameter estimation; Pulse measurements; Stress measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN
0-7803-3369-1
Type
conf
DOI
10.1109/ESREF.1996.888188
Filename
888188
Link To Document