DocumentCode :
2684735
Title :
Study of the soft leakage current induced ESD on LDD transistor
Author :
Wada, Tetsuaki
Author_Institution :
Matsushita Electronics Corporation
fYear :
1996
fDate :
1996
Firstpage :
1707
Lastpage :
1710
Keywords :
Circuit testing; Electronic equipment testing; Electrostatic discharge; Leakage current; MOSFETs; Protection; Semiconductor device testing; Temperature; Transistors; Variable structure systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
Type :
conf
DOI :
10.1109/ESREF.1996.888197
Filename :
888197
Link To Document :
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