DocumentCode
2684815
Title
2.24 Gbit/s Direct Modulation of Injection Laser by Monolithic Silicon Multiplexer
Author
Bosch, B.G. ; Langmann, U. ; Daniel, D.
fYear
1984
fDate
May 30 1984-June 1 1984
Firstpage
537
Lastpage
539
Abstract
It is shown that direct laser-diode pulse-code modulation at 2.24 Gbit/s can be performed by a fast Si monolithic integrated bipolar circuit (2.5 µm design rules, pn-junction isolation, f/sub T/ /spl ap/ 7 GHz at V/sub CE/ = 1 V) : The current switch output stage of a 4:1-time-division multiplexer IC feeds a modulation current swing of 4 mA into a TJS injection laser biased above threshold. The measured laser diode response for different static data input patterns are reported.
Keywords
Bipolar integrated circuits; Monolithic integrated circuits; Multiplexing; Optical design; Optical pulses; Pulse circuits; Pulse modulation; Silicon; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1984.1131853
Filename
1131853
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