DocumentCode :
2684971
Title :
A new method to determine the influence of thermomechanical stress on the reliability of metal lines in integrated circuits
Author :
Glasow, A.v. ; Kammer, H. ; Kohlhase, A.
Author_Institution :
SIEMENS AG, Semiconductor Group
fYear :
1996
fDate :
1996
Firstpage :
1755
Lastpage :
1758
Keywords :
Aluminum alloys; Capacitive sensors; Electromigration; Integrated circuit reliability; Temperature; Tensile stress; Testing; Thermal stresses; Thermomechanical processes; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
Type :
conf
DOI :
10.1109/ESREF.1996.888209
Filename :
888209
Link To Document :
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