Title :
Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults - a characterization case study using atomic force microscopy
Author :
Jacob, P. ; Hoeppner, K.
Author_Institution :
IHP Institute for Semiconductor Physics
Keywords :
Atomic force microscopy; Capacitors; Delay; Electric breakdown; FETs; Rough surfaces; Scanning electron microscopy; Silicon; Stacking; Surface roughness;
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
DOI :
10.1109/ESREF.1996.888215
