Title :
Towards a 120 GHz SiGe LNA for millimeter-wave imaging
Author :
Shumakher, Evgeny ; Elad, Danny
Author_Institution :
IBM Haifa Res. Labs., Haifa Univ. Campus, Haifa, Israel
Abstract :
Imaging in the millimeter-wave range promises significant benefits for safety and security. The low THz range is being rapidly unraveled by various silicon technologies. The following work presents the progress on design and characterization of an amplifier operating in the 120 GHz frequency range, realized in IBM´s standard 0.12-um SiGe BiCMOS technology. Highly encouraging is the good agreement obtained between the measured and the simulated performance of the gain-blocks.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; low noise amplifiers; millimetre wave imaging; IBM standard BiCMOS technology; LNA; SiGe; frequency 120 GHz; low THz range; millimeter-wave imaging; size 0.12 mum; Detectors; Gain; Imaging; Impedance matching; Millimeter wave technology; Noise; Silicon germanium; D-band; Low-Noise Amplifier; SiGe; mm-wave imaging;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4577-1692-8
DOI :
10.1109/COMCAS.2011.6105821
