DocumentCode
2685156
Title
Towards a 120 GHz SiGe LNA for millimeter-wave imaging
Author
Shumakher, Evgeny ; Elad, Danny
Author_Institution
IBM Haifa Res. Labs., Haifa Univ. Campus, Haifa, Israel
fYear
2011
fDate
7-9 Nov. 2011
Firstpage
1
Lastpage
4
Abstract
Imaging in the millimeter-wave range promises significant benefits for safety and security. The low THz range is being rapidly unraveled by various silicon technologies. The following work presents the progress on design and characterization of an amplifier operating in the 120 GHz frequency range, realized in IBM´s standard 0.12-um SiGe BiCMOS technology. Highly encouraging is the good agreement obtained between the measured and the simulated performance of the gain-blocks.
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; low noise amplifiers; millimetre wave imaging; IBM standard BiCMOS technology; LNA; SiGe; frequency 120 GHz; low THz range; millimeter-wave imaging; size 0.12 mum; Detectors; Gain; Imaging; Impedance matching; Millimeter wave technology; Noise; Silicon germanium; D-band; Low-Noise Amplifier; SiGe; mm-wave imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on
Conference_Location
Tel Aviv
Print_ISBN
978-1-4577-1692-8
Type
conf
DOI
10.1109/COMCAS.2011.6105821
Filename
6105821
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