Title :
A novel series-parallel inverting charge pump topology in 40nm CMOS technology
Author :
Neri, F. ; Di Fazio, F. ; Teng, R. ; Balucani, M.
Author_Institution :
ST-Ericsson Switzerland, Switzerland
Abstract :
This paper presents an innovative inverting charge pump on a series-parallel architecture, suitable for ground-referenced power supply systems for earphone audio amplifiers. Implemented in a 40nm CMOS technology, the paper illustrates in details the architecture and the final measurement on silicon, highlighting great performance in terms of efficiency and THD when applied as negative power supply for high quality earphone audio amplifier.
Keywords :
CMOS analogue integrated circuits; audio-frequency amplifiers; charge pump circuits; earphones; harmonic distortion; CMOS technology; ground-referenced power supply systems; high-quality earphone audio amplifier; series-parallel inverting-charge pump topology; size 40 nm; Capacitors; Charge pumps; Equations; Steady-state; Switches; Topology; Transient analysis;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4577-1692-8
DOI :
10.1109/COMCAS.2011.6105825
