DocumentCode
2685329
Title
Effects of metallization lay-out on turn-off failure of modern power bipolar transistors
Author
Busatto, G. ; Conte, A. ; Patti, A.
Author_Institution
University of Napoli "Federico II"
fYear
1996
fDate
1996
Firstpage
1867
Lastpage
1870
Keywords
Bipolar transistors; Circuit simulation; Current density; Electric breakdown; Integrated circuit interconnections; Metallization; Modems; Proximity effect; SPICE; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN
0-7803-3369-1
Type
conf
DOI
10.1109/ESREF.1996.888234
Filename
888234
Link To Document