Title :
Effects of metallization lay-out on turn-off failure of modern power bipolar transistors
Author :
Busatto, G. ; Conte, A. ; Patti, A.
Author_Institution :
University of Napoli "Federico II"
Keywords :
Bipolar transistors; Circuit simulation; Current density; Electric breakdown; Integrated circuit interconnections; Metallization; Modems; Proximity effect; SPICE; Testing;
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
DOI :
10.1109/ESREF.1996.888234
