DocumentCode :
2685383
Title :
The GaAs heterojunction bipolar transistor: an electron device with optical device reliability
Author :
Henderson, T.S.
Author_Institution :
Texas Instruments Corporate R&D
fYear :
1996
fDate :
1996
Firstpage :
1879
Lastpage :
1886
Keywords :
Degradation; Electron devices; Gallium arsenide; Heterojunction bipolar transistors; Light emitting diodes; Optical devices; Photonic band gap; Radiative recombination; Semiconductor process modeling; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
Type :
conf
DOI :
10.1109/ESREF.1996.888237
Filename :
888237
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2685383
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