DocumentCode
2685388
Title
High density 3D integration
Author
Yu, Roy
Author_Institution
IBM T.J. Watson Res. Center, Yorktown Heights, NY
fYear
2008
fDate
28-31 July 2008
Firstpage
1
Lastpage
10
Abstract
This paper discusses the current and future needs in continued CMOS scaling, reviews the status of the transfer and joining (TJ) technology for MCM-D and wafer level 3DI integration, and explores the opportunities of the TJ technology in the realm of the ldquoMore than Moorerdquo era.
Keywords
CMOS integrated circuits; CMOS scaling; high density integration; three-dimensional integration; transfer-and-joining technology; wafer level integration; CMOS technology; Central Processing Unit; Computer architecture; Costs; Delay; Energy consumption; Hybrid integrated circuits; System performance; Transistors; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-2739-0
Electronic_ISBN
978-1-4244-2740-6
Type
conf
DOI
10.1109/ICEPT.2008.4606934
Filename
4606934
Link To Document