DocumentCode :
2685400
Title :
Simulation of the gate burnout of GaAs MESFET
Author :
Vashchenko, V.A. ; Martynov, J B ; Sinkevitch, V.F. ; Tager, A.S.
Author_Institution :
SRI PULSAR
fYear :
1996
fDate :
1996
Firstpage :
1887
Lastpage :
1890
Keywords :
Avalanche breakdown; Electric breakdown; Gallium arsenide; MESFETs; Metallization; Numerical simulation; Optical buffering; Optical microscopy; Pulse measurements; Two dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
Type :
conf
DOI :
10.1109/ESREF.1996.888238
Filename :
888238
Link To Document :
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