Title :
Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT´S
Author :
Meneghesso, G. ; Haddab, Y. ; Perrino, N. ; Canali, C. ; Zanoni, E.
Author_Institution :
University of Padova
Keywords :
Buffer layers; Current measurement; Degradation; Electrons; Gallium arsenide; HEMTs; Impact ionization; Superlattices; Temperature distribution; Testing;
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
DOI :
10.1109/ESREF.1996.888240
