DocumentCode :
2685439
Title :
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs
Author :
Menozzi, R. ; Borgarino, M. ; Cova, P. ; Baeyens, Y. ; Fantini, F.
Author_Institution :
Universita di Parma
fYear :
1996
fDate :
1996
Firstpage :
1899
Lastpage :
1902
Keywords :
Cutoff frequency; Electrons; Gallium arsenide; Impact ionization; Indium gallium arsenide; PHEMTs; Radio frequency; Stress measurement; Threshold voltage; Utility programs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
Type :
conf
DOI :
10.1109/ESREF.1996.888241
Filename :
888241
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2685439
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