DocumentCode :
2685456
Title :
Analysis of the surface base current drift in GaAs HBT´s
Author :
Maneux, C. ; Labat, N. ; Saysset, N. ; Toubul, A. ; Danto, Y. ; Dangla, J. ; Launay, P. ; Dumas, J.-M.
Author_Institution :
ENSIL, University of LIMOGES
fYear :
1996
fDate :
1996
Firstpage :
1903
Lastpage :
1906
Keywords :
Acceleration; Aging; Contact resistance; Degradation; Failure analysis; Gallium arsenide; Heterojunction bipolar transistors; Ohmic contacts; Stress; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
Type :
conf
DOI :
10.1109/ESREF.1996.888242
Filename :
888242
Link To Document :
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