Title :
Low-temperature growth of Si-nanostructures by laser assistance of conventional plasma enhanced chemical vapor deposition
Author :
Lin, Chun-Hung ; Lee, Ching-Ting
Author_Institution :
Inst. of Opt. Sci., Nat. Central Univ., Chung-li, Taiwan
Abstract :
We utilize a CO2 laser in the deposition process because SiH4 molecules have high photon absorption of laser light. This absorption increases the decomposition of SiH4 molecules and helps form the Si-nanostructures in low-temperature growth.
Keywords :
elemental semiconductors; gas lasers; laser materials processing; low-temperature techniques; nanostructured materials; plasma CVD; semiconductor growth; semiconductor thin films; silicon; CO2 laser; CO2; Si; Si-nanostructures; SiH4 molecules; decomposition; laser-assisted plasma enhanced chemical vapor deposition; low-temperature growth; photon absorption; Absorption; Chemical lasers; Chemical vapor deposition; Gas lasers; Laser theory; Plasma chemistry; Quantum dot lasers; Semiconductor films; Semiconductor materials; Silicon;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1277289
