• DocumentCode
    2685609
  • Title

    Low-temperature growth of Si-nanostructures by laser assistance of conventional plasma enhanced chemical vapor deposition

  • Author

    Lin, Chun-Hung ; Lee, Ching-Ting

  • Author_Institution
    Inst. of Opt. Sci., Nat. Central Univ., Chung-li, Taiwan
  • Volume
    2
  • fYear
    2003
  • fDate
    15-19 Dec. 2003
  • Abstract
    We utilize a CO2 laser in the deposition process because SiH4 molecules have high photon absorption of laser light. This absorption increases the decomposition of SiH4 molecules and helps form the Si-nanostructures in low-temperature growth.
  • Keywords
    elemental semiconductors; gas lasers; laser materials processing; low-temperature techniques; nanostructured materials; plasma CVD; semiconductor growth; semiconductor thin films; silicon; CO2 laser; CO2; Si; Si-nanostructures; SiH4 molecules; decomposition; laser-assisted plasma enhanced chemical vapor deposition; low-temperature growth; photon absorption; Absorption; Chemical lasers; Chemical vapor deposition; Gas lasers; Laser theory; Plasma chemistry; Quantum dot lasers; Semiconductor films; Semiconductor materials; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
  • Print_ISBN
    0-7803-7766-4
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2003.1277289
  • Filename
    1277289
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2685609