DocumentCode
2685858
Title
Research and comparison of two life testing methods
Author
Qi, Haochun ; Lu, Changzhi ; Zhang, Xiaoling ; Xie, Xuesong
Author_Institution
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
fYear
2011
fDate
12-15 June 2011
Firstpage
1040
Lastpage
1044
Abstract
Both traditional life testing method and constant Electrical stress and Temperature Ramp stress Method (CETRM) are described. The two methods are compared taking the GaAs microwave power field effect transistor (FET) DX0011 life testing as an example. CETRM used less testing samples, took shorter testing time, and provided more reliability information than common life testing method.
Keywords
electronic equipment testing; electronic products; life testing; research and development; CETRM; DX0011 life testing; constant electrical stress and temperature ramp stress method; life testing method; microwave power field effect transistor; reliability; Degradation; Gallium arsenide; Life estimation; Life testing; Reliability; Stress; Accelerated Degradation Testing; Accelerated Life Testing; Constant Electrical stress and Temperature Ramp stress Method; Conventional method of accelerated life testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability, Maintainability and Safety (ICRMS), 2011 9th International Conference on
Conference_Location
Guiyang
Print_ISBN
978-1-61284-667-5
Type
conf
DOI
10.1109/ICRMS.2011.5979446
Filename
5979446
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