Title :
Research and comparison of two life testing methods
Author :
Qi, Haochun ; Lu, Changzhi ; Zhang, Xiaoling ; Xie, Xuesong
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Abstract :
Both traditional life testing method and constant Electrical stress and Temperature Ramp stress Method (CETRM) are described. The two methods are compared taking the GaAs microwave power field effect transistor (FET) DX0011 life testing as an example. CETRM used less testing samples, took shorter testing time, and provided more reliability information than common life testing method.
Keywords :
electronic equipment testing; electronic products; life testing; research and development; CETRM; DX0011 life testing; constant electrical stress and temperature ramp stress method; life testing method; microwave power field effect transistor; reliability; Degradation; Gallium arsenide; Life estimation; Life testing; Reliability; Stress; Accelerated Degradation Testing; Accelerated Life Testing; Constant Electrical stress and Temperature Ramp stress Method; Conventional method of accelerated life testing;
Conference_Titel :
Reliability, Maintainability and Safety (ICRMS), 2011 9th International Conference on
Conference_Location :
Guiyang
Print_ISBN :
978-1-61284-667-5
DOI :
10.1109/ICRMS.2011.5979446
