Title :
Characterisation of Large-Signal Bipolar Transistors in L-Band
Abstract :
Practical problems encountered in the characterisation of an L-band common base bipolar power transistor using three different characterisation techniques are discussed. One of the techniques, an improved "load-pull" measurement technique, is shown to be a superior characterisation method. Results obtained from this method can be used to design a collector matching network.
Keywords :
Bipolar transistors; Computer errors; L-band; Microwave measurements; Microwave theory and techniques; Power amplifiers; Power generation; Power measurement; Power transistors; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1131930
