Title :
Silicide/poly link explosion in laser redundancy technology for very high density memory IC repair
Author :
Lu, C.Y. ; Yaney, D.S.
Author_Institution :
AT&T Bell Lab., Allentown, PA, USA
Abstract :
A critical and detailed characterization of silicide/poly (polycide) fuse explosion in laser redundancy technology for VLSI/ULSI memory application is reported. The much more complicated behavior of polycide link (for example, a TaSi2/poly fuse) explosion as compared with polysilicon link is investigated and clarified by examining its optical and thermal properties. The impact of scaling on laser redundancy technology has also been demonstrated
Keywords :
VLSI; integrated circuit technology; integrated memory circuits; laser beam applications; redundancy; TaSi2-Si; ULSI; VLSI; laser redundancy technology; memory IC repair; optical properties; scaling; silicide/polycide fuse link explosion; thermal properties; very high density; CMOS technology; Explosions; Fuses; Laser beam cutting; Optical pulses; Pulse measurements; Redundancy; Silicides; Ultra large scale integration; Very large scale integration;
Conference_Titel :
VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/VTSA.1989.68585
