• DocumentCode
    2686054
  • Title

    Silicide/poly link explosion in laser redundancy technology for very high density memory IC repair

  • Author

    Lu, C.Y. ; Yaney, D.S.

  • Author_Institution
    AT&T Bell Lab., Allentown, PA, USA
  • fYear
    1989
  • fDate
    17-19 May 1989
  • Firstpage
    71
  • Lastpage
    74
  • Abstract
    A critical and detailed characterization of silicide/poly (polycide) fuse explosion in laser redundancy technology for VLSI/ULSI memory application is reported. The much more complicated behavior of polycide link (for example, a TaSi2/poly fuse) explosion as compared with polysilicon link is investigated and clarified by examining its optical and thermal properties. The impact of scaling on laser redundancy technology has also been demonstrated
  • Keywords
    VLSI; integrated circuit technology; integrated memory circuits; laser beam applications; redundancy; TaSi2-Si; ULSI; VLSI; laser redundancy technology; memory IC repair; optical properties; scaling; silicide/polycide fuse link explosion; thermal properties; very high density; CMOS technology; Explosions; Fuses; Laser beam cutting; Optical pulses; Pulse measurements; Redundancy; Silicides; Ultra large scale integration; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on
  • Conference_Location
    Taipei
  • Type

    conf

  • DOI
    10.1109/VTSA.1989.68585
  • Filename
    68585
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2686054