DocumentCode
2686114
Title
GaAs MESFET Optimization and New Device Applications Based on Wave Property Studies
Author
Fricke, K. ; Hartnagel, H.L.
fYear
1985
fDate
4-6 June 1985
Firstpage
192
Lastpage
195
Abstract
The results to be presented are obtained by an experimental investigation of the wave properties on FET structures using especially fabricated MESFETs. The use of this information for an optimization of MESFET structures and for a development of new devices is discussed. It will be demonstrated that a significant improvement of the FET gain is obtainable.
Keywords
Attenuation; Attenuators; Electrodes; FETs; Frequency measurement; Gallium arsenide; Impedance; Joining processes; MESFETs; Phase shifters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location
St. Louis, MO, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1985.1131938
Filename
1131938
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