Process simulation of DRIE and its application in tapered TSV fabrication

TSV (through silicon via ) has been widely welcomed as an enabling technology for three-dimensional integration in a package with high density. The developing of a drilling method for TSVs with tapered sections by experimental methodology can be a tedious task. The authors thus explore the possibility to simulate the process conditions effectively with an in-house developed simulator which utilize hybrid line and cell evolution algorithms. The micro-fabrication using the parameters obtained by the simulation has demonstrated TSVs with tapered sectional profiles and filled with electroplated coppers as expected, which validates the effectiveness of the simulated results.