Title :
Silicon carbide microwave MESFET research at DERA Malvern
Author :
Uren, M.J. ; Hilton, K.P. ; Davis, R.G. ; Ball, G. ; Guest, J.J. ; Smith, B.H. ; Williams, G. ; Willis, H.
Author_Institution :
DERA, Malvern, UK
Abstract :
Microwave devices fabricated in SiC offer huge benefits compared to conventional GaAs based devices, in particular offering enhanced power handling and higher voltage operation. Here we report on progress towards the establishment of a power MESFET process, including highly encouraging DC and S-parameter results from single finger devices, and initial results for multi-finger power devices. Simulations of the ultimate microwave power performance of wide bandgap FET devices are presented
Keywords :
microwave power transistors; DERA Malvern; S-parameter results; SiC; microwave MESFET; microwave power performance; multi-finger power devices; power handling; single finger devices; wide bandgap FET devices;
Conference_Titel :
Advances in Semiconductor Devices (Ref. No. 1999/025), IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19990151
