DocumentCode
2686268
Title
State space models of diode and bipolar transistor for simulation of power converters
Author
Batard, C.
Author_Institution
IUT de Nantes, France
Volume
2
fYear
1996
fDate
23-27 Jun 1996
Firstpage
1661
Abstract
The perfecting of the digital control and regulation loops of power converters cannot be done without a simulation phase. The aim of this paper is to show the behavioural approach of components through a model described in the state-space by an inner model, in order to allow the identification of the parameters of the model from experimental curves
Keywords
bipolar transistor switches; circuit analysis computing; parameter estimation; power bipolar transistors; power convertors; power engineering computing; power semiconductor diodes; power semiconductor switches; semiconductor device models; state-space methods; switching circuits; bipolar transistors; component behaviour approach; parameters identification; power converters; power semiconductor diode; simulation phase; state-space models; Bipolar transistors; Circuit simulation; Circuit testing; Electric resistance; Electric variables control; Inductance; Mathematical model; Semiconductor diodes; State-space methods; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location
Baveno
ISSN
0275-9306
Print_ISBN
0-7803-3500-7
Type
conf
DOI
10.1109/PESC.1996.548804
Filename
548804
Link To Document