DocumentCode
2686402
Title
A Novel GaAs FET Oscillator with Low Phase Noise
Author
Riddle, A.N. ; Trew, R.J.
fYear
1985
fDate
4-6 June 1985
Firstpage
257
Lastpage
260
Abstract
A novel GaAs FET oscillator circuit is presented. This circuit is capable of reducing phase noise up to 20 db. A source-coupled pair of GaAs FETs has a balanced characteristic which can eliminate both the reactive and resistive modulation mechanisms which upconvert l/f noise. This circuit is inherently broadband and ideal for monolithic implementations.
Keywords
Circuit noise; Equations; FETs; Frequency; Gallium arsenide; Low-frequency noise; Microwave devices; Microwave oscillators; Phase noise; Positron emission tomography;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location
St. Louis, MO, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1985.1131956
Filename
1131956
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