Title :
An Approach to Realizing Multi-Octave Performance in GaAs-FET YIG-Tuned Oscillators
Abstract :
An approach to developing multi-octave GaAs-FET YIG-tuned oscillators is described. A short discussion of the theory is given, followed by a presentation of experimental results for a 3.5 to 19.5 GHz YIG-tuned oscillator.
Keywords :
Bandwidth; Circuit topology; Coupling circuits; Equivalent circuits; FETs; Gallium arsenide; Inductance; Negative feedback; Oscillators; Resonance;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1131957
