Title :
Characterization, simulation and modeling of PLL under irradiation using HDL-A
Author :
Martínez, I. ; Delatte, P. ; Flandre, D.
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain, Belgium
Abstract :
The PLL response to heavy ion radiation is investigated. Firstly, the radiation currents in transistors are introduced at the schematic level thanks to sources modeled in HDL-A. Secondly, the radiated block is simulated at the transistor level while the other blocks are replaced by a behavioral model in HDL-A. This allows the authors to simulate the whole PLL in order to examine the effects of radiation at its output. The objective is to obtain a complete HDL-A behavioral model of the PLL, including heavy ion effects
Keywords :
circuit simulation; integrated circuit modelling; ion beam effects; monolithic integrated circuits; phase locked loops; HDL-A behavioral model; PLL characterization; PLL modeling; PLL response; PLL simulation; SEU; behavioral model; heavy ion effects; heavy ion radiation; irradiated PLL; phase-locked loop; radiation currents; transistor level simulation; Charge pumps; Circuit simulation; Frequency conversion; Medical simulation; Phase frequency detector; Phase locked loops; Radiation effects; Silicon; Single event upset; Voltage-controlled oscillators;
Conference_Titel :
Behavioral Modeling and Simulation, 2000. Proceedings. 2000 IEEE/ACM International Workshop on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7695-0893-6
DOI :
10.1109/BMAS.2000.888365
