Characterization, simulation and modeling of PLL under irradiation using HDL-A

Author

Martínez, I. ; Delatte, P. ; Flandre, D.

Author_Institution

Microelectron. Lab., Univ. Catholique de Louvain, Belgium

fYear

2000

fDate

2000

Firstpage

57

Lastpage

61

Abstract

The PLL response to heavy ion radiation is investigated. Firstly, the radiation currents in transistors are introduced at the schematic level thanks to sources modeled in HDL-A. Secondly, the radiated block is simulated at the transistor level while the other blocks are replaced by a behavioral model in HDL-A. This allows the authors to simulate the whole PLL in order to examine the effects of radiation at its output. The objective is to obtain a complete HDL-A behavioral model of the PLL, including heavy ion effects

Keywords

circuit simulation; integrated circuit modelling; ion beam effects; monolithic integrated circuits; phase locked loops; HDL-A behavioral model; PLL characterization; PLL modeling; PLL response; PLL simulation; SEU; behavioral model; heavy ion effects; heavy ion radiation; irradiated PLL; phase-locked loop; radiation currents; transistor level simulation; Charge pumps; Circuit simulation; Frequency conversion; Medical simulation; Phase frequency detector; Phase locked loops; Radiation effects; Silicon; Single event upset; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Behavioral Modeling and Simulation, 2000. Proceedings. 2000 IEEE/ACM International Workshop on

Conference_Location

Orlando, FL

Print_ISBN

0-7695-0893-6

Type

conf

DOI

10.1109/BMAS.2000.888365

Filename

888365