The design of the Ku band Dielectric Resonator Oscillator

Phase noise is considered as a significant source of performance degradation of irreducible error rate in millimeter-wave and microwave systems, in particular, for applications employing low cost and moderate bit rate systems. Many new ways to improve oscillator phase noise have been proposed. There was the new developments using dielectric resonators assembled on monolithic microwave integrated circuits. The paper provides a new approach to accurately simulate the Dielectric Resonator and design the GaAs MESFET dielectric resonator oscillator (DRO) in the 12.75 GHz by negative resistance theory and Harmonic Balance theory with use of two EDA (electronic design automation) tool (CST&ADS). Passive microwave & RF component design is traditionally seen as CSTpsilas core competence. The soft of CST will be used in accurately simulate the dielectric resonator. The soft of advanced design systerm of the Agilent will be used in the nolinerity analyses and optimization design of the DRO . After the EDA tool simulate and optimization, The unprecedented performance of DRO was found . At @12.75 GHz, output power exceed 13 dBm, Phase noise less -104 dBc.