DocumentCode :
2686619
Title :
An analysis and design approach of a modified high frequency GaAs air bridge process for low cost assembly applications
Author :
Mays, Kenneth W.
Author_Institution :
TriQuint Semicond., Hillsboro, OR, USA
fYear :
2011
fDate :
7-9 Nov. 2011
Firstpage :
1
Lastpage :
5
Abstract :
Decreasing time to market, improving electrical performance, and decreasing overall costs are primary driving forces in semiconductor markets. The purpose of this paper is to demonstrate how changes made to the fabrication process of an existing production GaAs technology enables quicker development time while maintaining the design kit and model infrastructure. This updated technology enables packaging of high frequency devices using high volume, low cost assembly techniques. The fabrication changes will be described as well as the design modifications necessary to simulate, test, and model the devices.
Keywords :
III-V semiconductors; assembling; gallium arsenide; semiconductor device models; semiconductor device packaging; semiconductor device testing; GaAs; fabrication process; frequency device packaging; low cost assembly techniques; modified high frequency air bridge process design approach; Atmospheric modeling; Bridges; Current measurement; Gallium arsenide; Logic gates; Performance evaluation; Semiconductor device modeling; Air Bridge; BCB Dielectric; Gallium Arsenide; Modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4577-1692-8
Type :
conf
DOI :
10.1109/COMCAS.2011.6105897
Filename :
6105897
Link To Document :
بازگشت