Title :
A 30 GHz Low Noise FET Amplifier
Author :
Watkins, E.T. ; Schellenberg, J.M. ; Yamasaki, H.
Abstract :
A low noise FET amplifier has been developed for the 27.5 to 30 GHz communications band using a new 1/4 m gate GaAs FET device. The 3-stage amplifier exhibits a maximum noise figure of 3.2 dB across the 27.5 to 30 GHz band with an associated gain of 23 +-0.5 dB.
Keywords :
Aircraft; Bandwidth; Equivalent circuits; FETs; Frequency; Gallium arsenide; Low-noise amplifiers; Millimeter wave technology; Noise figure; Noise level;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1131974
