• DocumentCode
    2686711
  • Title

    A 1 Watt 28 GHz Band Amplifier Using Clustered FETs

  • Author

    Takagi, T. ; Seine, K. ; Iida, A. ; Kobiki, M. ; Mitsui, Y. ; Takeda, F.

  • fYear
    1985
  • fDate
    4-6 June 1985
  • Firstpage
    324
  • Lastpage
    327
  • Abstract
    The clustered FET operating at Ka-band, in which four FET cells with 800 µm gate width are combined by the new 4-way monolithic combiner, has been developed. The amplifier using these clustered FETs has been demonstrated with more than 1 watt power output with 6 dB associated gain over 27.6 - 29.3 GHz.
  • Keywords
    Bonding; FETs; Gain; High power amplifiers; Impedance; Power amplifiers; Power generation; Radio frequency; Resistors; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1985 IEEE MTT-S International
  • Conference_Location
    St. Louis, MO, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1985.1131975
  • Filename
    1131975
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2686711