Title :
PT-IGBT PSpice model with new parameter extraction for life-time and epy dependent behaviour simulation
Author :
Musumeci, S. ; Raciti, A. ; Sardo, M. ; Frisina, F. ; Letor, R.
Author_Institution :
Dept. of Electr., Electron. & Syst. Eng., Catania Univ., Italy
Abstract :
IGBT PSpice models recently proposed do not give satisfactory simulation results of the behaviour of punch-through (PT) IGBTs. The reason can be attributed to the incorrect modelling of the particular epitaxial structure of the intrinsic PNP of the IGBT. In particular, the most critical behaviour to simulate accurately is the turn-off since such a transient is strongly influenced by the lifetime of the minority carriers and the reapplied voltage on the collector of the bipolar part of the IGBT. An improved IGBT PSpice model is presented aiming at overcoming the incompleteness of other models. A detailed procedure describing the parameter extraction of the model by new methods is also developed. The proposed model is validated by comparing several simulation runs with experimental traces on both static and dynamic conditions for both fast and slow IGBTs at different working conditions
Keywords :
SPICE; carrier lifetime; circuit analysis computing; insulated gate bipolar transistors; minority carriers; power bipolar transistors; semiconductor device models; PSpice models; behaviour simulation; minority carriers lifetime; parameter extraction; power IGBT; punch-through IGBTs; reapplied voltage; turn-off modelling; working conditions; Circuit simulation; Employee welfare; Insulated gate bipolar transistors; MOSFETs; Packaging; Parameter extraction; Power semiconductor switches; SPICE; Semiconductor process modeling; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
Print_ISBN :
0-7803-3500-7
DOI :
10.1109/PESC.1996.548807
