Title :
A 0.5 µm Silicon Bipolar Transistor for Low Phase Noise Oscillator Applications Up to 20 GHz
Author :
Leung, C.C. ; Snapp, C.P. ; Grande, V.
Abstract :
An interdigitated silicon bipolar transistor with 0.5 micrometer emitter width and 2 micrometer emitter-emitter pitch has been fabricated which has a measured Fmax greater than 30 GHz. Low phase noise YIG-tuned oscillators with fundamental frequency bands of 4-18 and 8-22 GHz have been demonstrated using this transistor.
Keywords :
Bipolar transistors; Bonding; Capacitance; Contact resistance; Frequency; Oscillators; Phase noise; Scattering parameters; Silicon; Wire;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1131990
