DocumentCode
2686980
Title
500 MHz, 100 W X-Band Solid State Amplifier
Author
Mellavarpu, R. ; MacMaster, G.
fYear
1985
fDate
4-6 June 1985
Firstpage
387
Lastpage
390
Abstract
This paper describes advances made in developing a wideband, high power solid state amplifier at X-band. Presently a bandwidth of 500 MHz with peak power levels of 100 W at 30% duty have been obtained by combining only four GaAs IMPATT diodes in a spatial field type of power combiner/amplifier. Key features of this device are its high combining efficiency ( ~ 95%), a high degree of isolation (>30 dB) between elemental amplifier modules and a 10 dB stable dynamic range.
Keywords
Bandwidth; Broadband amplifiers; Diodes; Electromagnetic heating; High power amplifiers; Impedance; Microwave amplifiers; Power amplifiers; Radiofrequency amplifiers; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location
St. Louis, MO, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1985.1131991
Filename
1131991
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