Title :
500 MHz, 100 W X-Band Solid State Amplifier
Author :
Mellavarpu, R. ; MacMaster, G.
Abstract :
This paper describes advances made in developing a wideband, high power solid state amplifier at X-band. Presently a bandwidth of 500 MHz with peak power levels of 100 W at 30% duty have been obtained by combining only four GaAs IMPATT diodes in a spatial field type of power combiner/amplifier. Key features of this device are its high combining efficiency ( ~ 95%), a high degree of isolation (>30 dB) between elemental amplifier modules and a 10 dB stable dynamic range.
Keywords :
Bandwidth; Broadband amplifiers; Diodes; Electromagnetic heating; High power amplifiers; Impedance; Microwave amplifiers; Power amplifiers; Radiofrequency amplifiers; Solid state circuits;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1131991
