DocumentCode :
2687066
Title :
Power Charcterisation of a MESFET Amplifier Using Small Signal Measurements and Volterra Series
Author :
Lambrianou, G. ; Aitchison, C.S.
fYear :
1985
fDate :
4-6 June 1985
Firstpage :
409
Lastpage :
413
Abstract :
The power performance of a microwave GaAs MESFET amplifier is predicted from small signal measurements based on the Volterra Series representation. Expressions for the non-linear power gain frequency response, the output power and gain compression factor are presented. The major sources of gain compression are identified. Experimental verification of the theory is presented by means of a 1.3µm gate MESFET amplifier at 7.8GHz.
Keywords :
Distortion measurement; Frequency response; Gallium arsenide; High power amplifiers; Impedance; MESFET circuits; Power amplifiers; Power generation; Power measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1985.1131997
Filename :
1131997
Link To Document :
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