DocumentCode
2687066
Title
Power Charcterisation of a MESFET Amplifier Using Small Signal Measurements and Volterra Series
Author
Lambrianou, G. ; Aitchison, C.S.
fYear
1985
fDate
4-6 June 1985
Firstpage
409
Lastpage
413
Abstract
The power performance of a microwave GaAs MESFET amplifier is predicted from small signal measurements based on the Volterra Series representation. Expressions for the non-linear power gain frequency response, the output power and gain compression factor are presented. The major sources of gain compression are identified. Experimental verification of the theory is presented by means of a 1.3µm gate MESFET amplifier at 7.8GHz.
Keywords
Distortion measurement; Frequency response; Gallium arsenide; High power amplifiers; Impedance; MESFET circuits; Power amplifiers; Power generation; Power measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location
St. Louis, MO, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1985.1131997
Filename
1131997
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