Title :
60 GHz 90nm CMOS wideband neutralized PA with 23dB gain and 20% PAE
Author :
Cohen, Emanuel ; Degani, Ofir ; Ritter, Dan
Author_Institution :
Mobile Wireless Group, Intel Haifa, Haifa, Israel
Abstract :
This paper presents a 60GHz PA based on differential cross coupled (CC) transformer design. The 3-stage PA, fabricated in 90nm CMOS, achieves a 23dB gain with integrated baluns, maximum power added efficiency (PAE) of 19.5%, Psat of 9.5dBm with a 12GHz BW and 0.05mm2 chip size. The paper shows the advantages of transformers and MOScap neutralization feedback for creating a state-of-the-art wideband efficient PA. An analysis of PA linearity is presented to reach record measured efficiency value of 7% at 4dB power backoff from P1dB.
Keywords :
CMOS analogue integrated circuits; baluns; differential transformers; millimetre wave integrated circuits; millimetre wave power amplifiers; wideband amplifiers; 3-stage PA; CMOS wideband neutralized power amplifier; MOScap neutralization feedback; bandwidth 12 GHz; differential cross coupled transformer design; efficiency 20 percent; efficiency 7 percent; frequency 60 GHz; gain 23 dB; integrated baluns; power added efficiency; size 90 nm; CMOS integrated circuits; Circuit stability; Gain; Impedance matching; Linearity; OFDM; Stability analysis;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4577-1692-8
DOI :
10.1109/COMCAS.2011.6105925
